Metal-insulator transition in infinitesimally weakly disordered flat bands
نویسندگان
چکیده
We study the effect of infinitesimal onsite disorder on d-dimensional all bands flat lattices. The lattices are generated from diagonal Hamiltonians by a sequence (d + 1) local unitary transformations parametrized angles ${\theta}_i$. Without loss generality, we consider case two separated finite gap $\Delta$. perturbed states originating described an effective tight binding network with on- and off-diagonal strength which depends manifold original W is only affecting overall scale Hamiltonian. Upon variation for d = 1 2 find that localization persists any choice unitaries, length can be maximized specific values Instead, in 3 identify non-perturbative metal-insulator transition upon varying angles.
منابع مشابه
Metal-Insulator-Transition in a Weakly interacting Disordered Electron System
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ژورنال
عنوان ژورنال: Physical review
سال: 2021
ISSN: ['0556-2813', '1538-4497', '1089-490X']
DOI: https://doi.org/10.1103/physrevb.104.l180201